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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package *High voltage ratings *Low collector saturation voltage *Fast switching speed APPLICATIONS *Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6738 2N6739 2N6740 Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2N6738 VCBO Collector-base voltage 2N6739 2N6740 2N6738 VCEO Collector-emitter voltage 2N6739 2N6740 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 100 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.25 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2N6738 2N6739 2N6740 CONDITIONS MIN TYP. MAX UNIT 2N6738 Collector-emitter sustaining voltage 300 VCEO(SUS) 2N6739 IC=0.2A ;IB=0 350 V 2N6740 400 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=4A 2.0 V VBEsat Base-emitter saturation voltage IC=5A;IB=1A VCEV=Rated VCEV;VBE=-1.5V TC=100 VEB=8V; IC=0 1.6 0.1 1.0 2.0 V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=3V 10 40 fT Transition frequency IC=0.2A ; VCE=10V 10 60 MHz Switching times s td Delay time 0.1 tr Rise time IC=5A;IB1=-IB2=1A VCC=125V tp=20s,Duty cycle1.0% 0.4 s ts Storage time 2.5 s tf Fall time 0.5 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6738 2N6739 2N6740 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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